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Process
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The process requires usual and cheap reagents (sand..) and occurs in a standard tubular oven.
The growth of the nanowire is carried out in the absence of catalyst.
The growth temperature reaches 1400°C.
A graphite growth support is used.
The nanowire is obtained by reacting
- a carbon derivative in gaseous phase
- a silicon derivative in gaseous phase
- optionally a nitrogen derivative in gaseous phase. |
The process is directly transferable to industry, with the benefit of a yield 10 to 100 times higher than usual process such as the processes by "template", by nucleation or "ball milling".
Contact us : Philippe Roussel+33 (0)4-37-37-42-98
philippe.roussel@universite-lyon.fr
-- Link to Key_points_Si-based_nanowire.pdf (253.30 Kb) --
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Création www.comete.com création logo entrepriseProcess transferable, gaseous phase, growth, nanofibre Process yield, oven, nanowire, industry, nanocable home process, multi-layer coating, nanofibre, nanorod, si-based, patent, licensing, sic patent, nanowire, si-based, licence, process, sic Home
Process transferable, gaseous phase, growth, nanofibre yield, oven, nanowire, industry, nanocable Process
Characteristics nanocable, color, felt, severe conditions, nanofibre nanorod, long, pure, coating, nanowire, SiC Characteristics
Applications SiC-Based device, sensor, multi-functional, nanofibre, si-based composite, electronics, NEMS, nanowire, thermo Applications
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